前收市價 | 23,206.00 |
開市 | 23,206.00 |
買盤 | 22,706.00 x 100 |
賣出價 | 26,000.00 x 5000 |
今日波幅 | 23,206.00 - 23,206.00 |
52 週波幅 | 20,380.00 - 25,992.73 |
成交量 | |
平均成交量 | 7 |
市值 | 6.306T |
Beta 值 (5 年,每月) | 0.85 |
市盈率 (最近 12 個月) | 35.09 |
每股盈利 (最近 12 個月) | 661.37 |
業績公佈日 | 無 |
遠期股息及收益率 | 464.59 (2.00%) |
除息日 | 2023年12月28日 |
1 年預測目標價 | 無 |
Advanced Micro Devices, Inc (NASDAQ:AMD) signed a contract with Samsung Electronics (OTC:SSNLF) to supply HBM3E (5th generation high bandwidth memory) valued at approximately $3 billion (4 trillion won for its new data center chip, the MI350. Samsung Electronics has agreed to provide AMD with 12-layer HBM3E DRAM, slated for mass production in the year’s first half. Samsung started supplying samples to customers in February. The deal is worth about $3 billion (KRW 4.134 trillion), Viva 100 report
On Tuesday, Samsung Electronics Co (OTC:SSNLF) announced that it has started mass production of the world’s most advanced 286-layer NAND flash memory chips, which offer increased data storage capacity. The company’s ninth-generation 3D NAND memory, which surpasses the 236-layer eighth-generation version by expanding bit density by 50%, will be utilized in artificial intelligence data centers and smartphones, Nikkei Asia reports. U.S. tech companies like Alphabet Inc (NASDAQ:GOOG) (NASDAQ:GOOGL)
The Korean electronics giant has struggled against Taiwan Semiconductor and SK Hynix. But the game isn’t over yet.